PolarHV TM HiPerFET
Power MOSFET
(Electrically Isolated Back Surface)
IXFR 64N60P
V DSS
I D25
R DS(on)
t rr
=
=
600 V
36 A
105 m ?
200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
ISOPLUS247 (IXFR)
Symbol
Test Conditions
Maximum Ratings
E153432
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
600
600
± 30
V
V
V
V GSM
I D25
Transient
T C = 25 ° C
± 40
36
V
A
Isolated back surface
I DM
I AR
E AR
E AS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
150
64
80
3.5
A
A
mJ
J
G = Gate
S = Source
D = Drain
Silicon chip on Direct-Copper-Bond
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
20
V/ns
Features
l
P D
T J
T JM
T stg
V ISOL
T L
F C
Weight
T C = 25 ° C
50/60 Hz, RMS, 1 minute
1.6 mm (0.062 in.) from case for 10 s
Mounting force
ISOPLUS247
360
-55 ... +150
150
-55 ... +150
2500
300
22..130/5..29
5
W
° C
° C
° C
V~
° C
N/lb
g
l
l
l
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
l
l
Easy to mount
Space savings
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 8 mA
V GS = ± 30 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = I T , Note 1
T J = 125 ° C
600
3.0
5.0
± 200
25
1000
105
V
V
nA
μ A
μ A
m ?
l
High power density
? 2006 IXYS All rights reserved
DS99441E(01/06)
相关PDF资料
IXFR64N60Q3 MOSFET N-CH 600V 42A ISOPLUS247
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相关代理商/技术参数
IXFR64N60Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR66N50Q2 功能描述:MOSFET 50 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR70N15 功能描述:MOSFET 67 Amps 150V 0.028 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR75N10Q 功能描述:MOSFET 75 Amps 100V 0.02 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR80N10Q 功能描述:MOSFET 80 Amps 100V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR80N15Q 功能描述:MOSFET 75 Amps 150V 0.0225 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR80N20Q 功能描述:MOSFET 80 Amps 200V 0.03 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR80N50P 功能描述:MOSFET 500V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube